Acta Metallurgica Sinica (English Letters) ›› 2025, Vol. 38 ›› Issue (5): 823-830.DOI: 10.1007/s40195-025-01839-9

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Thermoelectric Performance of CuInSe2-ZnSe Solid Solution

Chengwei Sun1, Wang Li1, Chengjun Li1, Yingchao Wei1, Wenyuan Ma1, Xin Li1, Qinghui Jiang1, Yubo Luo1(), Junyou Yang1()   

  1. 1Sate Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract:

CuInSe2 is an N-type diamond-like semiconductors thermoelectric candidate for power generation at medium temperature with its environmentally friendly and cost-effective properties. However, the intrinsic high thermal conductivity of CuInSe2 limits the enhancement of its thermoelectric performance. Herein, we investigate the thermoelectric performance of N-type CuInSe2 materials by incorporating ZnSe through a solid solution strategy. A series of (CuInSe2)1-x(ZnSe)x (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) samples were synthesized, forming continuous solid solutions, while introducing minor porosity. ZnSe solid solution effectively reduces the lattice thermal conductivity of the CuInSe2 matrix at near-room temperatures, but has a weaker effect at higher temperatures. Due to the intrinsic low carrier concentration of the system, resulting in high resistivity, the maximum figure of merit (ZT) of (CuInSe2)0.8(ZnSe)0.2 reaches 0.08 at 773 K. Despite the relatively low ZT, the solid solution strategy proves effective in reducing the lattice thermal conductivity near-room temperature and offers potential for cost-effective thermoelectric materials.

Key words: Thermoelectric, CuInSe2, ZnSe, Solid Solution