Revealing the True Thermoelectric Properties of SnTe through Removing SnO2 Contamination

doi:10.1007/s40195-025-01838-w

Abstract

Abstract:

Previous studies on SnTe have indicated that its low ZT value is associated with a high carrier concentration of up to 10²⁰-10²¹ cm⁻³ and an excessively high lattice thermal conductivity. However, the high carrier concentration and lattice thermal conductivity observed in SnTe are not solely attributable to the presence of numerous intrinsic tin vacancies and a simple crystal structure. Additionally, the oxides formed through the oxidation of Sn and SnTe exert a partial influence on these properties. In this study, by pretreating the raw Sn material and isolating it from oxygen during preparation, we achieve a significant improvement in the thermoelectric performance of binary SnTe at high temperatures, with a peak ZT of approximately 0.83 at 800 K. This approach effectively reduces the content of SnO₂ in the matrix, enhancing the electrical and thermal transport properties of the samples. Specifically, the high-thermal conductivity of SnO₂ facilitates the formation of channels at grain boundaries that are more conducive to heat transfer, while its poor electrical conductivity and Seebeck coefficient diminish the intrinsic electrical transport behavior of SnTe. The removal of SnO₂ reflects the true thermoelectric performance of SnTe, making the samples prepared by this method stand out compared to other reported binary SnTe materials.

Key words: SnTe, Thermoelectric, Oxidation, SnO₂

Yicheng Wang, Rongcheng Li, Bowen Jin, Chenghao Xie, Xinfeng Tang, Gangjian Tan. Revealing the True Thermoelectric Properties of SnTe through Removing SnO₂ Contamination[J]. Acta Metallurgica Sinica (English Letters), 2025, 38(5): 754-762.

Figures/Tables 6

Fig. 1 a XPS spectrum of Sn element for the sample prepared from raw Sn material without surface treatment in air, b XPS spectrum of the Sn element for the sample prepared from raw Sn material with surface treatment in air, c TG curves of SnTe measured under air and argon atmospheres, and d XPS spectrum of the Te element for the sample prepared from raw Sn material without surface treatment in air

Fig. 2 a XRD patterns of SnTe samples, b XPS spectrum of Sn element for the sample prepared from untreated raw Sn material in air, etched for 60 s at 2000 eV, c XPS spectrum of Sn element for the sample prepared from raw Sn material with surface treatment in air, etched for 60 s at 2000 eV, d XPS spectrum of Sn element for the sample prepared from raw Sn material with surface treatment in argon, etched for 60 s at 2000 eV

Fig. 3 Schematic diagram illustrating the sources, content, and presence of oxides in SnTe prepared under three different conditions

Fig. 4 a Electrical conductivity, b Seebeck coefficient, and c power factor (PF) as a function of temperature for three samples prepared by controlling the surface state of raw materials and preparation atmosphere; d carrier concentration and mobility at room temperature. The inset in a displays the electrical conductivity of SnO2 [60], and the inset in b displays the Seebeck coefficient of SnO2 [60]

Fig. 5 a Total thermal conductivity, b lattice thermal conductivity, and c ZT value for three samples prepared by controlling the surface state of raw materials and preparation atmosphere. d ZT values of the samples prepared in this study and other binary SnTe samples for comparison. The inset in a displays the total thermal conductivity of SnO2 [60], and the inset in b displays the lattice thermal conductivity of SnO2 [60]

Fig. 6 Thermoelectric properties of SnTe-x wt% SnO2 samples with SnO2 additions of 0.5 wt%, 1 wt%, and 2 wt%

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Revealing the True Thermoelectric Properties of SnTe through Removing SnO₂ Contamination

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