Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method

doi:10.1007/s40195-015-0206-z

Abstract

Abstract:

In this research, the growth of GaN thin films on c-plane sapphire (0001) substrates via two-step method without the assist of buffer layer and catalysts was demonstrated. First, gallium oxide (Ga₂O₃) thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method. The deposited Ga₂O₃ thin films were then nitridated at various temperatures. In this research, attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films. It is revealed that 950 °C is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential (0002) growth direction.

Key words: Sputtering, Nitridation, Gallium oxide, Gallium nitride

Chee Yong Fong, Sha Shiong Ng, Fong Kwong Yam, Haslan Abu Hassan, Zainuriah Hassan. Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method[J]. Acta Metallurgica Sinica (English Letters), 2015, 28(3): 362-366.

Figures/Tables 5

Fig. 1 XRD patterns of the GaN thin films deposited on c-plane Al2O3 (0001) substrates and nitridated at 850, 950, 1,050 °C

Table 1 The 2θ and FWHM values of GaN (0002) peak, crystallite size and R rms of GaN thin films deposited on c-plane Al2O3 (0001) substrates and nitridated at different temperatures

Temperature (^oC)	2θ (°)	FWHM (°)	Crystallite size (nm)	R _rms (nm)
850	34.55	0.26	31.99	1.47
950	34.61	0.22	37.81	0.99
1,050	34.56	0.53	15.70	1.14

Fig. 2 SPM surface morphologies and roughness analysis (1 μm × 1 μm scans) of GaN thin films deposited on c-plane Al2O3 (0001) substrates and nitridated at different temperatures: a 850 °C; b 950 °C; c 1,050 °C

Fig. 3 FESEM images of GaN thin films deposited on c-plane Al2O3 (0001) substrates and nitridated at different temperatures: a 850 °C; b 950 °C; c 1,050 °C

Fig. 4 Raman spectra of GaN thin films deposited on c-plane Al2O3 (0001) substrates and nitridated at 850, 950, and 1,050 °C

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