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Acta Metallurgica Sinica (English Letters)  2019, Vol. 32 Issue (12): 1530-1536    DOI: 10.1007/s40195-019-00938-8
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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ying-Feng He1, Mei-Ling Li1, San-Jie Liu1, Hui-Yun Wei1, Huan-Yu Ye1, Yi-Meng Song1, Peng Qiu1, Yun-Lai An1, Ming-Zeng Peng1(), Xin-He Zheng1()
1 School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
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Abstract  

In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer deposition. The deposition was carried out at a low temperature using triethylgallium (TEGa) precursor and Ar/N2/H2 plasma. Chemical properties of the bulk GaN and GaN-graphene interface were analyzed using X-ray photoelectron spectroscopy. The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope. The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied. The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress. Optical properties of the sample were investigated by photoluminescence (PL) at room temperature. The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.

Key words:  Plasma-enhanced atomic layer deposition      Gallium nitride      Graphene      Interface microstructure     
Received:  26 March 2019     

Cite this article: 

Ying-Feng He, Mei-Ling Li, San-Jie Liu, Hui-Yun Wei, Huan-Yu Ye, Yi-Meng Song, Peng Qiu, Yun-Lai An, Ming-Zeng Peng, Xin-He Zheng. Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition. Acta Metallurgica Sinica (English Letters), 2019, 32(12): 1530-1536.

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https://www.amse.org.cn/EN/10.1007/s40195-019-00938-8     OR     https://www.amse.org.cn/EN/Y2019/V32/I12/1530

C O Ga N Si
7.16% 11.61% 43.59% 37.64% 0%
Table 1  Elemental composition of bulk GaN grown on graphene investigated via XPS
Fig. 1  High-resolution XPS scans of Ga 2p3/2, N 1s, O 1s and C 1s obtained from GaN-graphene interface
Fig. 2  a XRR measurement of GaN deposited on MLG templates and b critical angle extraction
Fig. 3  Raman spectra of the sample of a graphene before (blue line) and after (black line) deposition and b the as-deposited GaN
Fig. 4  GIXRD pattern of the as-deposited GaN
Fig. 5  a, b Low-magnification cross-sectional TEM image of the as-deposited sample, c TEM image of GaN, d selected area electron diffraction (SAED) pattern of GaN
Fig. 6  HRTEM images of the GaN/graphene interface and (inset) FFT of the selected square areas
Fig. 7  Surface morphology of GaN thin film
Fig. 8  Room temperature photoluminescence spectrum of the sample
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