Acta Metallurgica Sinica (English Letters) ›› 2019, Vol. 32 ›› Issue (12): 1530-1536.DOI: 10.1007/s40195-019-00938-8

• Orginal Article • Previous Articles     Next Articles

Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Ying-Feng He1, Mei-Ling Li1, San-Jie Liu1, Hui-Yun Wei1, Huan-Yu Ye1, Yi-Meng Song1, Peng Qiu1, Yun-Lai An1, Ming-Zeng Peng1(), Xin-He Zheng1()   

  1. 1 School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China
  • Received:2019-03-26 Revised:2019-05-31 Online:2019-12-10 Published:2019-11-25


In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer deposition. The deposition was carried out at a low temperature using triethylgallium (TEGa) precursor and Ar/N2/H2 plasma. Chemical properties of the bulk GaN and GaN-graphene interface were analyzed using X-ray photoelectron spectroscopy. The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope. The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied. The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress. Optical properties of the sample were investigated by photoluminescence (PL) at room temperature. The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.

Key words: Plasma-enhanced atomic layer deposition, Gallium nitride, Graphene, Interface microstructure