Abstract:

Transparent conductive oxide ZnSnO₃ films were prepared by radio-frequency magnetron sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, atomic force microscopy, surface profile, UV-Vis spectroscopy, and Hall effect. The structures of the films were either amorphous or nanocrystalline depending on sputtering parameters including deposition time, target power, chamber pressure, and the target-substrate separation. The average transmittance of the ZnSnO₃ films within the visible wavelength was approximately 80% and the resistivity of the ZnSnO₃ films was in the range of 10^-3-10^-4 Ω cm. The structural, optical, and electrical properties of the ZnSnO₃ films could be adjusted and regulated by optimizing the sputtering process, allowing materials with specific properties to be designed.

Key words: ZnSnO₃ film, Powder target, Magnetron sputtering, Optical property, Electrical property