Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

doi:10.1007/s40195-014-0129-0

Abstract

Abstract:

The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating 4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.

Key words: SiC, Anomalous resistivity, Polytype inclusion, Activation energy, Compensation mechanism

Yang Xianglong, Yang Kun, Cui Yingxin, Peng Yan, Chen Xiufang, Xie Xuejian, Hu Xiaobo, Xu Xiangang. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers[J]. Acta Metallurgica Sinica (English Letters), 2014, 27(6): 1083-1087.

Figures/Tables 6

Fig. 1 Typical resistivity mapping of vanadium-doped semi-insulating 4H-SiC wafer

Fig. 2 Anomalous resistivity mapping of vanadium-doped semi-insulating 4H-SiC wafer

Fig. 3 Raman mapping a and Raman spectra of SI 4H-SiC wafer corresponding to the positions A, B in a, b

Fig. 4 Arrhenius plots of resistivity versus 1,000/T measured by COREMA-VT for 4H-SiC wafer a 6H-SiC wafer b

Fig. 5 Raman mapping of 4H-SiC wafer with both 6H and 15R polytype inclusions a and Raman spectra corresponding to positions A, B, C in a, b

Fig. 6 Resistivity mapping of 4H-SiC wafer with both 6H and 15R polytype inclusions

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