Preparation and Characterization of Cu2ZnSn(SxSe1-x)4 Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors

doi:10.1007/s40195-014-0098-3

Abstract

Abstract:

Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization. Composition, microstructure, morphology, and properties of the as-prepared CZTSSe thin films were investigated. XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions. SEM results showed that the CZTSSe thin film had a uniform morphology and large grains. EDS results revealed the composition of CZTSSe film was Cu:Zn:Sn:S:Se = 23.7:12.6:12.2:37.7:13.8 (in at%), which was in accordance with the stoichiometric Cu₂ZnSn(S,Se)₄. The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV. The resistivity, carrier concentration, and mobility were 0.53 Ω cm, 7.9 × 10¹⁸ cm³, and 7.5 cm²/(Vs), respectively.

Key words: Cu₂ZnSn(S,Se)₄, Evaporation, Sulfo-selenization, Thin film

Xin Jiang, Lexi Shao, Jun Zhang, Jianmin Chen. Preparation and Characterization of Cu₂ZnSn(S_xSe_1-x)₄ Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors[J]. Acta Metallurgica Sinica (English Letters), 2014, 27(4): 689-693.

Figures/Tables 7

Table 1 Chemical compositions of the evaporation source, precursor, and CZTSSe thin film

Name	Composition (at%)					Ratio of composition
Name	Cu	Zn	Sn	S	Se	Cu/(Zn + Sn)	Zn/Sn	Metal/(S + Se)	S/Se
Evaporation source	45	25	30	–	-	0.82	0.83	-	-
Precursor	46.1	24.6	29.3	-	-	0.86	0.84	-	-
CZTSSe	23.7	12.6	12.2	37.7	13.8	0.95	1.03	0.94	2.73

Fig. 1 EDS spectrum of CZTSSe thin film

Fig. 2 XRD pattern of Cu–Zn–Sn precursor

Fig. 3 XRD pattern of CZTSSe thin film

Fig. 4 Raman spectrum of CZTSSe thin film

Fig. 5 SEM images of the top view for Cu–Zn–Sn precursor a, top view for CZTSSe thin film b, cross-sectional view for CZTSSe thin film c

Fig. 6 UV–Vis transmittance spectrum of CZTSSe thin film. The inset image shows the estimated band gap of 1.33 eV

References 20

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Preparation and Characterization of Cu₂ZnSn(S_xSe_1-x)₄ Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors

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