Acta Metallurgica Sinica (English Letters) ›› 2015, Vol. 28 ›› Issue (7): 946-950.DOI: 10.1007/s40195-015-0284-y
• Orginal Article • Previous Articles
Dong-Ning He1,2,3(), Peter Hodgson2, Wei-Min Gao2(
)
Received:
2014-12-26
Revised:
2015-04-24
Online:
2015-05-22
Published:
2015-07-23
Dong-Ning He, Peter Hodgson, Wei-Min Gao. Epitaxial Growth of Multi-structure SnO2 by Chemical Vapor Deposition[J]. Acta Metallurgica Sinica (English Letters), 2015, 28(7): 946-950.
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Fig. 2 SEM images of tin dioxides grown under different conditions: a SnO2 heterostructure grown on a substrate with 0.5 mm height and 25-nm gold layer, where inset a1 is for the nanowalls formed in 2 h and inset a2 is for nanowires grown after 2 h; b SnO2 nanowires grown on a substrate with 0.5 mm height and 12.5-nm gold layer, and the inset is the tip of the nanowires; c SnO2 whiskers grown on a substrate with 3 mm height and 12.5-nm gold layer, and the inset is the tip of the whiskers
Fig. 5 Schematic diagrams for the growth of SnO2 nanowalls: a gold dropped on a substrate by sputter coating; b Au-Sn alloy belts formed through shirking at 1000 °C; c nanowalls grown from the “rallying points” and the alloy on the top gradually shirked to points for nanowire growth; d nanowires grown on the top of nanowalls
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