SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM

Abstract

Abstract: A modified liquid phase epitaxy apparatus for semiconductor materials was used to measure the solubility of GaAs in Bi.Two phase diagrams rich in Bi under H_2 and N_2 atmospheres were obtained according to the results of measurement.A new phenomenon,in which the parameter Q value(quantity of GaAs dissolved in Bi in fixed time/saturation quantitu,of GaAs in Bi)was different from each other at various temperatures and there existed a maxi- mum Q value at definite temperature,was observed.This phenomenon may be regarded as a common feature of a simple binary metallic system which has the phase diagram similar to that of Bi-GaAs.The difference observed from the dependence of Q values on temperature in both H_2 and N_2 atmospheres was discussed.

Key words: solubility, liquid phase epitaxy, phase diagram

FENG Shuifu ZHO U Jicheng Shanghai Institute of Metallurgy,Academia Sinica,Shanghai,China ZHOU Jicheng,Shanghai Institute of Metallurgy,Academia Sinica,Shanghai 200050,China. SOLUBILITY CHARACTERISTICS OF GaAs IN Bi AND THEIR PHASE DIAGRAM[J]. Acta Metallurgica Sinica (English Letters), 1990, 3(11): 312-315.

References

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