OBSERVATION OF EPITAXIAL OVERLAYER OF METALS AT ATOMIC LEVEL

Abstract

Abstract: Observation of epitaxial overlayer of metals at atomic level has been successfully observed in field ion microscope with 5 ns pulsed-laser heating.The condition of superlattice layer growth depends on the surface free energy and the lattice misfit.Many defects,such as vacancies,va- cancy clusters,voids,dislocations and twins are produced during epitaxial growth because of the lattice misfit even though the condition of surface free energy is satisfied.Alloying is ob- served to occur on the surface of the metal during the epitaxial growth.Diffusion is probably via the exchange mechanism.

Key words: field ion microscope, epitaxial growth, crystal defect, diffusion mechanism, superlattice

GAO Qiaojun Peking University,Beijing,ChinaT.T.TSONG The Pennsylvania State University,U.S.A Dept.of Physics,Peking University,Beijing,China. OBSERVATION OF EPITAXIAL OVERLAYER OF METALS AT ATOMIC LEVEL[J]. Acta Metallurgica Sinica (English Letters), 1989, 2(4): 231-236.

References

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