Abstract: A mathematical model to represent the fluid flow, temperature distribution and mass transfer in CVD reactors has been developed. The model is used to predict the velocity, temperature, and molar concentration profiles in the tapered annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of the investigation contribute to the understanding of the transport pro- cesses involved in such a system. The model can also be used for optimizing the design parameters, such as inlet flow rate, susceptor tilt angle, etc.

Key words: reactor of chemical vapor deposition, velocity field, temperature field, rate of Si deposition