Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal (100) GaAs and (001) Si Substrate Fabricated by Pulsed Laser Deposition

doi:10.1007/s40195-017-0686-0-

Abstract

Abstract:

FeGa thin film has been deposited on (100)-oriented GaAs and (001)-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system. Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser. X-ray diffraction reveals the presence of first-order order-disorder structure of D0₃-ordered grain phase and disordered bcc A2 structure on GaAs substrate. The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities. However, film on Si substrate did not exhibit structure change, which can be attributed to a large lattice mismatch between FeGa and Si.

Key words: Magnetostrictive film, Soft magnetic film, Texture, Galfenol

Y. Zhang, M. Turghun, C. J. Huang, T. Wang, F. F. Wang, W. Z. Shi. Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal (100) GaAs and (001) Si Substrate Fabricated by Pulsed Laser Deposition[J]. Acta Metallurgica Sinica (English Letters), 2018, 31(6): 623-640.

Figures/Tables 8

Fig. 1 Typical SEM images of FeGa film on GaAs and Si, respectively. a Surface topography on GaAs; b cross-sectional image on GaAs; c AFM 3D image; d surface topography on Si, e cross-sectional image on Si; f AFM 3D image

Fig. 2 Thicknesses of FeGa thin film on GaAs and Si substrate with different deposition time and laser energy densities

Table 1 Chemical composition of FeGa film measured by EDS and ICP, respectively

	Laser energy density
	1.00 J cm^-2	1.33 J cm^-2	1.67 J cm^-2	2.00 J cm^-2
Fe (at.%)	86.57	87.70	87.81	87.83	Measured by EDS
Ga (at.%)	13.43	12.30	12.19	12.17	Measured by EDS
Fe (at.%)	-	-	87.83	88.10	Measured by ICP
Ga (at.%)	-	-	12.17	11.90	Measured by ICP

Fig. 3 XRD patterns of FeGa films on GaAs substrate with different deposition time a laser energy densities b

Fig. 4 VSM magnetic hysteresis loops of FeGa films on GaAs substrate with different deposition time a laser energy densities b

Fig. 5 XRD patterns of FeGa films on Si substrate with different deposition time a laser energy densities b

Fig. 6 VSM magnetic hysteresis loops of FeGa films on Si substrate with different deposition time a laser energy densities b

Fig. 7 Details of H c and M r/M s of FeGa film fabricated on different substrates with the increase in energy density a deposition time b

References

[1]	L. Liu, Q. Zhan, H. Yang, H. Li, S. Zhang, Y. Liu, B. Wang, X. Tan, R.W. Li, AIP Adv. 6, 035206(2016)
[2]	J. Gutierrez, A. Lasheras, P. Martins, N. Pereira, J.M. Barandiaran, S. Lanceros-Mendez, Sensors 17, 1251 (2017)
[3]	N. Lei, T. Devolder, G. Agnus, P. Aubert, L. Daniel, J.V. Kim, W. Zhao, T. Trypiniotis, R.P. Cowburn, C. Chappert, D. Ravelosona, P. Lecoeur, Nat. Commun. 4, 1378(2013)
[4]	T.I. Fitchorov, S. Bennett, L. Jiang, G. Zhang, Z. Zhao, Y. Chen, V.G. Harris, Acta Mater. 73, 19(2014)
[5]	Y. Xie, Q. Zhan, Y. Liu, G. Dai, H. Yang, Z. Zuo, B. Chen, B. Wang, Y. Zhang, X. Rong, R.W. Li, AIP Adv. 4, 117113(2014)
[6]	M. Jimbo, Y. Fujiwara, T. Shimizu, J. Appl. Phys. 117, 17A313- 1 (2015)
[7]	T. Speliotis, D. Niarchos, Microelectron. Eng. 112, 183(2013)
[8]	Q. Xing, T.A. Lograsso, Scr. Mater. 65, 359(2011)
[9]	E.C. Estrine, W.P. Robbins, M.M. Maqableh, B.J.H. Stadler, J. Appl. Phys. 113, 17A937-1 (2013)
[10]	A.O. Mandru, J.P. Corbett, A.L. Richard, J. Gallagher, K.Y. Meng, D.C. Ingram, F. Yang, A.R. Smith, Appl. Phys. Lett. 109, 142402(2016)
[11]	Y. Zhang, T. Gan, T. Wang, F. Wang, W. Shi, J. Magn. Magn.Mater. 417, 37(2016)
[12]	X. Zhang, Q. Zhan, G. Dai, Y. Liu, Z. Zuo, H. Yang, B. Chen, R.W. Li, J. Appl. Phys. 113, 17A901-1 (2013)
[13]	Y.C. Lin, C.F. Lin, IEEE Trans.Magn. 51, 1(2015)
[14]	H. Basumatary, J. Arout Chelvane, D.V.Sridhara Rao, S.V. Kamat, R. Ranjan, J. Magn. Magn. Mater 384, 58(2015)
[15]	D.A. Tuan, Y. Shin, T.L. Phan, T.V. Cuong, S. Cho, J. Appl. Phys. 115, 17C742-1 (2014)
[16]	A. Mahadevan, P.G. Evans, M.J. Dapino, Appl. Phys. Lett. 96, 012502(2010)
[17]	F. Gontad, A. Lorusso, A. Manousaki, A. Klini, A. Perrone, J. Mater. Sci. Technol. 32, 1192(2016)
[18]	F. Gontad, A. Lorusso, L. Solombrino, I. Koutselas, N. Vainos, A. Perrone, J. Mater. Sci. Technol. 31, 784(2015)
[19]	A.M. Balagurov, I.A. Bobrikov, I.S. Golovin, V.V. Cheverikin, S.A. Golovin, Mater. Lett. 181, 67(2016)
[20]	N.L. Raveendran, R. Pandian, S. Murugesan, K. Asokan, R.T.Rajendra Kumar, J. Alloys Compd 704, 420(2017)
[21]	C.C. Cao, Y.G. Wang, L. Zhu, Y. Meng, Y.D. Dai, J.K. Chen, J. Alloys Compd. 722, 394(2017)
[22]	Z. Wang, E. Feng, Y. Zhang, Q. Liu, J. Wang, Mater. Chem. Phys. 137, 499(2012)