Acta Metallurgica Sinica (English Letters)

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Electrical Properties and Local Domain Structure of LiNbO3 Thin Film Grown by Ion Beam Sputtering Method

V. Ievlev1), V. Shur2), M.Sumets1,3),A. Kostyuchenko1)   

  1. 1) Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia
    2) Ferroelectric Laboratory IPAM, Ural State University, pr.Lenina, 51, 620083,Ekaterinburg, Russia
    3) VoronezhInstitute of the State Fire Service of Russian Emergencies Ministry,Krasnoznamennaya st., 231, 394052, Voronezh, Russia
  • Received:2012-01-16 Revised:2013-04-16 Online:2013-10-25 Published:2013-09-13
  • Contact: M.Sumets

Abstract:

The nanocrystalline ferroelectric LiNbO3 films on (001) Si substrates with the random orientation of polycrystalline grains and the predominance of the grains with lateral orientation of the polar axis were grown using the ion beam sputtering method. The remanent polarization and the coercive field are 12 μC/cm2 and 29 kV/cm, respectively. The thermal annealing leads to the coarsening of the grains. The appearance of the “local texture,” which gives rise to the unipolarity of the heterostructures caused by the predominance of the one direction in the vertical component of the spontaneous polarization, is investigated.

Key words: LiNbO3 thin films, Ferroelectrics, Domain structure