Investigation of Charge Transport in Percolating Network of PdCu Nanoclusters

doi:10.1007/s40195-013-0015-1

Abstract

Abstract:

Transport of charge carriers in percolating nanocluster devices based on bimetallic PdCu nanoclusters was investigated in this work. The device was fabricated by self-assembly of the nanoclusters between electrical electrodes inside an ultra-high vacuum compatible system. The average size of the produced nanoclusters was 7.3 nm, and the composition was Pd_0.77Cu_0.23. Systematic in situ current–voltage measurements as a function of temperature were performed which provide a conductance–temperature profile. The results are explained in terms of the charge carriers’ tunneling through small potential barriers at the junctions between nanoclusters. The results predict the size of the nanoclusters as well as the magnitude of the potential difference of the tunneling barriers. This investigation helps understanding the nature of the interface between the nanoclusters and the charge carrier transport within those devices to be utilized for optimizing gas sensing properties of PdCu nanocluster devices.

Key words: PdCu, Bimetallic nanoclusters, Nanocluster devices, Inert-gas condensation, Tunneling, Charge transport

A. I. Ayesh, S. T. Mahmoud, N. Qamhieh, Z. A. Karam. Investigation of Charge Transport in Percolating Network of PdCu Nanoclusters[J]. Acta Metallurgica Sinica (English Letters), 2014, 27(1): 156-160.

Figures/Tables 5

Fig. 1 Schematic diagram of the UHV system and sample electrodes

Fig. 2 a Nanocluster composition as measured using EDX, b Pd0.77Cu0.23 nanocluster size distribution measured using the quadrupole mass filter, c TEM image of produced Pd0.77Cu0.23 nanocluster

Fig. 3 The current–voltage characteristics of the Pd0.77Cu0.23 device at temperatures between 292 and 12.4 K (the inset showing the I–V measurements between 50 and 12.4 K)

Fig. 4 The temperature dependences of the resistance a and conductance b of the Pd0.77Cu0.23 device (the solid lines are linear fits)

Fig. 5 The conductance–voltage profile of the Pd0.77Cu0.23 device between 292 and 12.4 K (the solid lines are linear fits)

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