Determination and Analysis of Optical Constant of Annealed Sn2Sb2S5 Thin Films

doi:10.1007/s40195-015-0246-4

Abstract

Abstract:

The effects of annealing on structural, optical and electrical properties of Sn₂Sb₂S₅ thin films were studied. Sn₂Sb₂S₅ thin films were deposited on no-heated glass substrates by single source vacuum evaporation method. The as-deposited films were annealed in air for 1 h at 100, 200 and 300 °C. XRD study shows that annealed films are crystallized according to the preferential orientation (602). Optical measurements show that the thin films have relatively high absorption coefficients in the range of 10⁵-10⁶ cm^-1 in the energy range of 2-3.25 eV. It is also found that Sn₂Sb₂S₅ exhibit two optical direct transitions. The models of Wemple-DiDomenico and Spitzer-Fan were applied for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants. The electrical resistivity measurements are recorded, and two activation energy values are determined. The layers annealed at 200 and 300 °C exhibit a resistive hysteresis behavior. The properties reported here offer perspective to Sn₂Sb₂S₅ for its application in many advanced technologies.

Key words: Sn2Sb2S5 thin films, Optical constants, Electrical properties

Yousra Fadhli, Adel Rabhi, Mounir Kanzari. Determination and Analysis of Optical Constant of Annealed Sn₂Sb₂S₅ Thin Films[J]. Acta Metallurgica Sinica (English Letters), 2015, 28(5): 656-662.

Figures/Tables 13

Fig. 1 XRD patterns of Sn2Sb2S5 films as-deposited and annealed at different temperatures

Table 1 The estimated values of the microstructural parameters of Sn2Sb2S5 films annealed at different temperatures

T (°C)	D (nm)	ε	δ (10^-16 m)
As-deposited	16	0.35	35.46
100	40	0.06	6.09
200	41	0.05	5.72
300	35	0.08	8.02

Fig. 2 Transmittance a, reflectance spectra b of Sn2Sb2S5 films annealed at different temperatures

Fig. 3 Absorption coefficient spectra of Sn2Sb2S5 films as-deposited and annealed at different temperatures

Fig. 4 Plot of (αhν)2 versus hν for Sn2Sb2S5 films annealed at different temperatures

Fig. 5 Plot of (αhν)2 versus hν for the Sb2O4 phase for the Sn2Sb2S5 film annealed at 300 °C

Fig. 6 The variation of the refractive index, n with the wavelength for Sn2Sb2S5 films annealed at different temperatures

Fig. 7 Plot of (n 2 - 1)-1 versus (hν)2 for Sn2Sb2S5 films annealed at different temperatures

Table 2 The estimated values of the optical parameters of Sn2Sb2S5 films annealed at different temperatures

T (°C)	E _g1 (eV)	E _g2 (eV)	E ₀ (eV)	E _d (eV)	ε _∞	N/m* (10⁴⁸ cm^-3)
As-deposited	1.72	1.99	2.66	11.11	6.51	4.61
100	1.62	2.01	2.76	12.27	9.79	3.17
200	1.29	1.60	1.88	14.92	11.72	0.47
300	1.79	2.07	2.55	12.34	7.18	2.26

Fig. 8 Plot of ε r versus λ 2 for Sn2Sb2S5 films annealed at different temperatures

Fig. 9 Variation of the resistivity with the annealing temperatures for the Sn2Sb2S5 films annealed at 200 °C a, 300 °C b

Fig. 10 Plots of ln σ versus 103/T for the Sn2Sb2S5 films annealed at 200 °C a, 300 °C b

Table 3 The estimated values of the activation energies of Sn2Sb2S5 films annealed at different temperatures

T (°C)	ΔE ₁ (eV)	ΔE ₂ (eV)
200	0.07	0.75
300	0.10	0.80

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Determination and Analysis of Optical Constant of Annealed Sn₂Sb₂S₅ Thin Films

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References 39.

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