Thermal Stability of WB2 and W-B-N Films Deposited by Magnetron Sputtering

doi:10.1007/s40195-018-0864-8

Abstract

Abstract:

The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB₂-type WB₂ and W-B-N (5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB₂ and W-B-N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB (700 °C) and Mo₂B₅-type WB₂ (1000 °C) are successively observed in the AlB₂-type WB₂ films, which show many cracks at the temperature ≥?800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W-B-N films due to the stabilization effect of a-BN phase, and the hardness increases to 34.1 GPa first due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB₂ and the W-B-N films deposited on WC-Co substrates, both the WB₂ and W-B-N films react with the YG8 (WC-Co) substrates leading to the formation of CoWB, CoW₂B₂ and CoW₃B₃ with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥?800 °C leading to the film failure; after vacuum annealing at 700 °C, the friction performance of the W-B-N films is higher than that of the deposited W-B-N films, while the wear resistance of the WB₂ films shows a slight decrease compared with that of the deposited WB₂ films.

Key words: AlB₂-type WB₂ films, W-B-N films, Magnetron sputtering, Thermal stability, Mechanical properties

Yan?Ming Liu, Tong Li, Feng Liu, Zhi-Liang Pei. Thermal Stability of WB₂ and W-B-N Films Deposited by Magnetron Sputtering[J]. Acta Metallurgica Sinica (English Letters), 2019, 32(1): 136-144.

Figures/Tables 10

Table 1 Summary of deposition conditions for the optimized WB2 and W-B-N films

Parameters	Values
Substrate temperature (°C)	400
Target-to-substrate distance (mm)	70
Pulsed bias voltage (V)	-?50
Target power (W)	172-176
Working pressure (Pa)	0.5
N₂ partial pressure (Pa)	0 (WB₂), 0.006 (W-B-N)
Deposition time (min)	80

Fig. 1 XRD patterns of the sample films annealed at different temperatures for 2 h, a WB2 films, b W-B-N films with 5.6 at.% nitrogen on Si wafers

Fig. 2 a W-B phase diagram calculated from the Gibbs energy functions [22], b experimental W-B phase diagram [23, 24]

Fig. 3 XPS spectra of W 4f a, B 1s b, N 1s c peaks of the WB2 and W-B-N films annealed at 900 °C

Table 2 Element compositions of the WB2 and W-B-N films deposited on Si wafers before and after vacuum annealing at 900 °C

Element	WB₂ films		W-B-N films
Element	W (at.%)	B (at.%)	W (at.%)	B (at.%)	N (at.%)
As-deposited samples	38.9	61.1	33.7	60.7	5.6
Annealed samples (900 °C)	47.2	52.8	33.5	61.0	5.5

Fig. 4 Surface morphology of a-d WB2 films, e-h W-B-N films deposited on Si wafers annealed at different temperatures

Fig. 5 XRD patterns of a WB2 films, b W-B-N films annealed at 900 °C deposited on YG8 substrates

Fig. 6 Surface morphology of a, b WB2 films, c, d W-B-N films deposited on YG8 substrates annealed at different temperatures

Fig. 7 Hardness and elastic modulus of the W-B-N films deposited on Si wafers annealed at different temperatures

Table 3 Hardness, friction coefficient and wear rate of the WB2 and W-B-N films deposited on YG8 substrates before and after vacuum annealing at 700 °C

	As-deposited films		Annealed films
	WB₂	W-B-N	WB₂	W-B-N
Hardness (GPa)	36.0	32.8	34.7	35.6
Friction coefficient	0.39	0.34	0.41	0.32
Wear rate (10^-7 mm³/mN)	4.05	2.20	6.36	1.7

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Thermal Stability of WB₂ and W-B-N Films Deposited by Magnetron Sputtering

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