Acta Metallurgica Sinica (English Letters) ›› 2001, Vol. 14 ›› Issue (1): 42-46 .

• Research Articles • Previous Articles     Next Articles

A NEW TREATMENT FOR INTERFACE OF METAL ANDDIELECTRIC IN FDTD METHOD

Z.D. Qian, B.W. Li, E.G. Wang   

  1. Key laboratory of National Education Ministry for Electromagnetic Processing of Materials, NortheasternUniversity, Shenyang 110006, China
  • Received:2000-04-11 Revised:2000-10-11 Online:2001-02-25 Published:2009-10-10
  • Contact: Z.D. Qian

Abstract: A new treatment for interface of metal and dielectric in finite-difference time domain(FDTD) method was presented, further how and why this treatment should be as itis was explained. The FDTD method was developed to compute the low-frequencyelectromagnetic fields in the metal instead of the traditional high-frequency ones as itwas originally proposed. The computational results agreed well with the experimentalones.

Key words: FDTD method, treatment for interface, electromagnetic field, numerical simulation