THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS

Acta Metallurgica Sinica (English Letters) ›› 2001, Vol. 14 ›› Issue (6): 453-456 .

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THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS

S.B. Zhang

State Laboratory for Surface Physics, Institute of Semiconductors & Center for Condensed Matter Physics.Chinese Academy of Sciences, Beijing 100083, China

Received:1900-01-01 Revised:1900-01-01 Online:2001-12-25 Published:2009-10-10
Contact: S.B. Zhang

Abstract

Abstract: The decays of transient photoconductivity and their light-induced changes of polymor-phous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well bya sum of two exponential decay functions, which indicates that there arc two kindsof traps contributing to the process. The light-induced changes of the concentrationand energy level of the traps were estimated. The results show that the light-inducedchanges in trap energy position Et, trap concentration Nt as well as photoconductivityare markedly less for pm-Si:H than that for a-Si:H.

Key words: light-induced change, transient, film

S.B. Zhang. THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS[J]. Acta Metallurgica Sinica (English Letters), 2001, 14(6): 453-456 .

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THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS

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