THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H

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Acta Metallurgica Sinica (English Letters) ›› 2002, Vol. 15 ›› Issue (1): 87-90 .

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THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H

C.Y.Chen, W.D.Chen, Y.Q.Wang

Received:2001-07-31 Revised:2001-10-28 Online:2002-02-15 Published:2009-10-10
Contact: C.Y.Chen

Abstract

Abstract: A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiOx :H) implanted with erbium is presented. Theexperimental results show that Er3+ luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolutionduring annealing below 535℃ results in a reduction of defects in the films, and hencean improved Er3+ emission.

Key words: photoluminescence, hydrogen, erbium

C.Y.Chen, W.D.Chen, Y.Q.Wang. THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H[J]. Acta Metallurgica Sinica (English Letters), 2002, 15(1): 87-90 .

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THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H

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