Acta Metallurgica Sinica (English Letters) ›› 2005, Vol. 18 ›› Issue (3): 295-299 .

• Research Articles • Previous Articles     Next Articles

OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

Y.F.Hu   

  1. College of Mechanical Engineering,South China University of Technology,Guangzhou510640,China
  • Received:1900-01-01 Revised:1900-01-01 Online:2005-06-25 Published:2009-10-10
  • Contact: Y.F.Hu

Abstract: Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer, lntra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.

Key words: poly-Si thin film, intra-granular defects, surface