Dielectric Properties of Eu-Doped CaCu3Ti4O12 with Different Compensation Mechanisms

doi:10.1007/s40195-016-0522-y

Abstract

Abstract:

To get a better understanding of the influence of rare-earth element doping, CaCu₃Ti₄O₁₂ (CCTO) samples with a partial substitution of Ca with Eu with different compensation mechanisms were designed and prepared by solid-state reaction. All the ceramics were single phase, while the dielectric constants and thermally activated energy values for dielectric relaxation in Eu-doped ceramics were both lower than those of CCTO. Ca_0.875Eu_0.1Cu₃Ti₄O₁₂ (CECT1) exhibited a slight decrease in both the permittivity and electric resistance of grain boundaries compared with CCTO, while Ca_0.85Eu_0.1Cu₃Ti₄O₁₂ (CECT2) underwent a sharp decrease in permittivity associated with an abnormally large resistance. The different dielectric behavior indicates that the dielectric properties of CCTO are sensitive to the valence states of cations and defects. The variation of permittivity is related to the localization of carriers, which, according to the XPS results, should be caused by the presence of oxygen vacancies. The formation of defect complexes between cations and oxygen vacancies leads to the increase in resistance and prevents the hopping between Cu⁺ and Cu²⁺, which is an important source of the polarization in grain boundaries.

Key words: CaCu₃Ti₄O₁₂, Compensate doping, Carrier localization, Oxygen vacancy

Jun-Wei Liu,Da-Yong Lu,Xin-Yu Yu,Qiao-Li Liu,Qiang Tao,Hong Change,Pin-Wen Zhu. Dielectric Properties of Eu-Doped CaCu₃Ti₄O₁₂ with Different Compensation Mechanisms[J]. Acta Metallurgica Sinica (English Letters), 2017, 30(2): 97-103.

Figures/Tables 7

Fig. 1 XRD patterns a and SEM images for CCTO b, CECT1 c, CECT2 d

Fig. 2 Temperature dependence of the dielectric constants of CCTO at different frequencies

Fig. 3 Frequency dependence of ε′ at 173 K for CCTO, CECT1 and CECT2. Symbols are experimental data, and lines are fitting results by the modified Debye’s model

Fig. 4 Frequency dependence of Z″ at 173 K for CECT1: The inset shows the Arrhenius plots of \(\sigma_{{\text{gb}}}\) for CCTO, CECT1 and CECE2

Fig. 5 Frequency dependence of \(\sigma_{{\text{ac}}}\) at 473 K for CCTO, CECT1 and CECT2

Fig. 6 Frequency dependence of normalized peaks \(M^{\prime \prime } /M_{\hbox{max} }^{\prime \prime }\) and \(Z^{\prime \prime } /Z_{\hbox{max} }^{\prime \prime }\) for a CCTO, b CECT1, c CECT2 at 473 K

Fig. 7 XPS spectra of the CCTO, CECT1 and CECT2 ceramics

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Dielectric Properties of Eu-Doped CaCu₃Ti₄O₁₂ with Different Compensation Mechanisms

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