Acta Metallurgica Sinica (English Letters) ›› 1990, Vol. 3 ›› Issue (11): 345-349.

• Research paper • Previous Articles     Next Articles

SYNTHESIS OF TiN FILM WITH ION BEAM ENHANCED DEPOSITION AND ITS PROPERTIES

ZHOU Jiankun LIU Xianghuai CHEN Youshan WANG Xi ZHENG Zhihong HUANG Wei ZOU Shichang Shanghai Institute of Metallurgy,Academia Sinica,Shanghai,China   

  • Received:1990-11-11 Revised:1990-11-11 Online:1990-11-11 Published:2009-10-10

Abstract: The TiN films were synthesized with an alternate process of depositing titanium from a E-gun evaporation source and 40 keV N~+ bombarding onto the target.It is shown from the composi- tion analysis and structure investigations using RBS,AES,TEM,XPS and X-ray diffraction spectrum that the formed fihns are mainly composed of TiN phase with grain size of 30—40 nm and without preferred orientation,the nitrogen content in the film is much less than that in case without N~+ bombarding,and an intermixed region about 40 nm thick exists between the film and the substrate.The films exhibt high microhardness and low friction. ZHOU Jiankun,Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica, Shanghai 200050,China

Key words: TiN film, ion beam enhanced deposition