Acta Metallurgica Sinica (English Letters) ›› 1993, Vol. 6 ›› Issue (6): 358-362.

• Research paper • Previous Articles     Next Articles

CRYSTAL DEFECTS AND GRAIN INTERFACE STRUCTURE OF ION-NITRIDED LAYERS

SUN Dongsheng LI Fengzhao Shandong Polytechnic University,Jinan;Laboratory of Atomic Imaging of Solids,Institute of Metal Research,Academia Sinica,Shenyang,ChinaDAI Jiyan LI Douxing Laboratory of Atomic Imaging of Solids,Institute of Metal Research,Academia Sinica,Shenyang,China associate professor,Institute of Materials Engineering,Shandong Polytechnic University,Jinan 250014,China   

  • Received:1993-12-25 Revised:1993-12-25 Online:1993-12-25 Published:2009-10-10

Abstract: Observation under high resolution electron microscope shows that the continuous bombing of high speed ions produces a great amount of vacant site defects.The assembly of vacancies forms vacant dish,and the collapase of vacant dish forms stacking fault tetrahedrons and oth- er crystal defects.The interfaces between phase ε(Fe_(2-3)N)and phase γ'(Fe_4N)are smooth, straight and coherent,and they have the orientation relationships of(11)//(0001)and [110]/[110] .

Key words: crystal defect, interface structure, ion-nitriding, steel 35CrMo