Acta Metallurgica Sinica (English Letters) ›› 1993, Vol. 6 ›› Issue (8): 98-101.

• Research paper • Previous Articles     Next Articles

NON-EQUILIBRIUM SEGREGATION OF Si ON Al-0.35 wt-% Si ALLOY SURFACE

CHEN Niug;YU Zongsen University of Science and Technology Beijing,Beijing,China professor,Department of Materials Physics,University of Science and Technology Beijing,Beijing 100083,China   

  • Received:1993-08-11 Revised:1993-08-11 Online:1993-08-11 Published:2009-10-10

Abstract: Si segregation was observed in the vacancy condensation pits,formed by supersaturated vacancies beneath the oxidation layer of Al-0.35wt-%Si alloy,by optical microscopy,X- ray photoelectron spectroscopy and microhardness tests.This phenomenon could only be explained by vacancy-Si complex inducing non-equilibrium segregation.

Key words: non-equilibrium segregation, vacancy, AI-Si alloy, surface, Si