Acta Metallurgica Sinica (English Letters) ›› 1995, Vol. 8 ›› Issue (2): 92-96.

• Research paper • Previous Articles     Next Articles

TEM STUDY OF C-B_4C-SiC COMPOSITES WITH SILICON ADDITIVE

ZHAO Lihua;WU Lijun;HUANG Qizhong;YANG Qiaoqin 1)(Material Research and Test Center,Hunan University,Changsha,China)2)(Powder Metallurgy Research Institute,Center-South University of Technology,Changsha,China)3)(Laboratory of Atomic Imaging of Solids, Institute of Metal Research, Chinese Academy of Science,Shenyang,China)Manuscript received 18 April 1995   

  • Received:1995-04-25 Revised:1995-04-25 Online:1995-04-25 Published:2009-10-10

Abstract: C-B4C-SiC composites with silicon additive obtained by the hot press sintering method are studied by means of transmission electron microscopy(TEM).When the specimens are heated to 1800℃,their structure does not change.When the specimens are heated to 2000℃,carbon begins to graphitize. Moreover,two monoclinic phases are observed.One monoclinic phase named as the M phase belongs to C-center monoclinic lattice with a=0.90nm,b=0.59nm,c=0.54nm and β=119.3°.The other monoclinic phase named as the Ml phase also belongs to C-center monoclinic lattice but with a=0.85nm,b=0.49nm,c=0.53nm and β=123.6°.

Key words: C-B_4C-SiC composite, electron microscopy