Acta Metallurgica Sinica (English Letters) ›› 1996, Vol. 9 ›› Issue (2): 103-108.

• Research paper • Previous Articles     Next Articles

BINDING ENERGY OF THE SHALLOW DONOR IN (CdTe)_m /(ZnTe)_n STRAINED DOUBLE QUANTUM WELL

XING Jinhai(Department of Physics,Liaoning University,Shenyang 110036,China)HUANG Heluan(Department of Electronic Science and Engineering,Liaoning University,110036,China)   

  • Received:1996-04-25 Revised:1996-04-25 Online:1996-04-25 Published:2009-10-10

Abstract: In this paper the binding energy of the shallow.donor in CdTe/ZnTe strained double quantum well was calculated.The effect of the finite well potential and strain,resulting from the lattice mismatch,on the binding energy of the impurity is included in a variational framework.The binding energy is obtained as a function of the well width,barrier width,and impurity position in the barrier by using a variational method.The result of the present calculation shows that the variational law of the binding energy is similar to that of unstrained materials.

Key words: binding energy, shallow donor, strained double quantum well, CdTe, ZnTe