ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

Acta Metallurgica Sinica (English Letters) ›› 1997, Vol. 10 ›› Issue (1): 10-16.

• Research paper • Previous Articles Next Articles

ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

HL. Huang;J.H Xing;G.L. Liu and G.Y Zhang(Department of Electrouic Science and Engineering, Liaoning University Shenyang 110036, China)(Department of Physics, Liaoning University Shenyang 110036, China)(Shenyang Polytechnic University Shenyan 110023, China)(Northeast Microelectronic Institute of Ministry of Electronic Industry Shenyang 110032, China)

Received:1997-02-25 Revised:1997-02-25 Online:1997-02-25 Published:2009-10-10

Abstract

Abstract: The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.

Key words: density of state, strained layer superlattice, CdSe/ZnSe, Fermi energy, band gap

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ELECTRONIC STRUCTURES OF (CdSe)_n/(ZnSe)_m STRAINED-LAYER SUPERLATTICES

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