Acta Metallurgica Sinica (English Letters) ›› 1999, Vol. 12 ›› Issue (4): 327-333.

• Research paper • Previous Articles     Next Articles

A COMPREHENSIVE INVESTIGATION ON A PECULIAR DEFECT IN WURTZITE GaN FILM

S.Q.Wang1 ,2) and H.Q.Ye1) 1) Laboratory of Atomic Imaging of Solids,Institute of Metal Research , The Chinese Academy of Sciences, Shenyang 110015 ,China 2)Department of Materials Science and Metallurgy , University of Cambridge, Cambridge CB2 3QZ, UK   

  • Received:1999-08-25 Revised:1999-08-25 Online:1999-08-25 Published:2009-10-10

Abstract: Apeculiar crystal defect was observed by experiment of high resolution electron microscopy( HREM) .It wasidentifiedtoformed bytwothreading dislocationsand asegmentof(11 20) domain boundary. An atomicstructure model was proposed for the anomalous defect. Theresultofthe weak beam experimentofelectron microscopeaffirmedthesuggested model.Thestructuralpropertiesofseveral GaN(11 2 0) domain boundaries werestudied by Molec ular Dynamicscalculations. Thetheoreticalresultsshowedthatthelike atom bonding domain boundary, whichcomposesthe main partofthe peculiar defect, has much higher formationenergy than itcounterpartof unlike atom bonding domain boundary. Theoutcome providesanotherevidenceforthesuggested model.

Key words: HREM, weak beam electron microscopy, crystal defect, Wurtzite GaN, molecular dynamics