Abstract: CN x films were made by a facing targets sputtering ( FTS) systemon the  Si(100) substrate under different  N 2 partial pressure.  XRD, XPS, FTIR and Raman Spectroscopy( RS) were measured to investigate the structure and the binding state of the film. The films are amorphous and the  N/C increases with the  N 2 partial pressure increasing and reaches 0 46 when the  N 2 pressure is 100%. The N incorporated  C forms N sp 2C and N sp 3C mainly and there is a small amount of  C≡N.