60Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

doi:10.1007/s40195-015-0232-x

金属学报英文版 ›› 2015, Vol. 28 ›› Issue (5): 559-566.DOI: 10.1007/s40195-015-0232-x

收稿日期:2014-08-11 修回日期:2014-10-15 出版日期:2015-02-15 发布日期:2015-07-23

⁶⁰Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

Thankamma George, A. G. Kunjomana()

Crystal Research Centre, Department of Physics, Christ University, Bangalore, 560 029, India

Received:2014-08-11 Revised:2014-10-15 Online:2015-02-15 Published:2015-07-23

摘要/Abstract

Abstract:

Physical vapor deposition method was employed to deposit antimony telluride (Sb₂Te₃) crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction, atomic force and scanning electron microscopy. Seebeck coefficient (S⊥c), electrical conductivity (σ⊥c) as well as power factor (PF) were enhanced for pure Sb₂Te₃ samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 × 10^-3 W m^-1K^-2 with an enhancement of 22% in the figure of merit (Z). When the delivered dose of ⁶⁰Co gamma radiation was increased from 0 to 30 kGy in the stoichiometric crystals, σ⊥c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 kGy gamma-irradiated crystals. Both R_H (B||c) and S⊥c were positive, suggesting that the prepared Sb₂Te₃ crystals retained the p-type semiconductivity after these treatments.

Key words: Antimony telluride, Physical vapor deposition, Irradiation, Annealing, Conductivity, Seebeck coefficient

. [J]. 金属学报英文版, 2015, 28(5): 559-566.

Thankamma George, A. G. Kunjomana. ⁶⁰Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition[J]. Acta Metallurgica Sinica (English Letters), 2015, 28(5): 559-566.

图/表 10

Fig. 1 Antimony telluride platelets grown by PVD method

Table 1 Elemental atomic ratio of the grown Sb2Te3 crystals

Sample no.	Gamma dose	Annealing temperature	Sb/Te ratio
1	15 kGy	-	40.19:59.81
2	20 kGy	-	40.19:59.81
3	25 kGy	-	40.25:59.75
4	30 kGy	-	40.79:59.21
5	-	373 K	40.39:59.61
6	-	473 K	40.76:59.24
7	-	573 K	40.98:59.02

Fig. 2 EDAX profile of Sb2Te3 crystals annealed at 473 K which yielded the highest power factor of 3.16 × 10-3 W m-1 K-2

Fig. 3 SEM images of unirradiated Sb2Te3 crystals a; 20 kGy b; 25 kGy c; 30 kGy d gamma ray-irradiated Sb2Te3 crystals; Sb2Te3 crystals annealed at 373 K e; 473 K f

Fig. 4 Powder XRD patterns of as-deposited and annealed (473 K, 573 K) Sb2Te3 crystals a; Gamma-irradiated (0, 25, 30 kGy) Sb2Te3 crystals b

Fig. 5 Variations of mobility and carrier concentration a; Seebeck coefficient and conductivity b; power factor c with annealing temperature of Sb2Te3 crystals

Fig. 6 Dependences of mobility and carrier concentration a; Seebeck coefficient and conductivity b; power factor c on irradiation dose

Fig. 7 AFM images a Distorted lattice, b virgin sample, c strained sample after irradiation with 30 kGy gamma ray dose

Fig. 8 Variations of thermal conductivity a; figure of merit b with annealing temperature

Fig. 9 Variations of thermal conductivity a and figure of merit b with gamma ray dose

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⁶⁰Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

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