Substrate Temperature-Dependent Physical Properties of Thermally Evaporated Sn4Sb6S13 Thin Films

doi:10.1007/s40195-015-0364-z

摘要/Abstract

Abstract:

In this work, the homogenous thin films of sulfosalt Sn₄Sb₆S₁₃ were successfully synthesized by the thermal evaporation technique onto corning 7059 glass substrates heated at various temperatures in the range of 30-200°C. The surface morphology and structural characteristics of Sn₄Sb₆S₁₃ films were analyzed by atomic force microscopy, X-ray diffraction, and energy-dispersive X-ray, respectively. The X-ray diffraction analysis revealed that Sn₄Sb₆S₁₃ thin films crystallized in monoclinic structure according to a preferential direction ( $6 ¯$ 11). An improvement in the structural properties by increasing the substrate temperature was observed. The values of some important parameters such as absorption coefficient (α), band gap (E_g), refractive index (n), extinction coefficient (k), and dielectric constant (ε_∞) of thin film were determined. The absorption coefficient was larger than 10⁵ cm^-1 in the visible range. The electron transition of Sn₄Sb₆S₁₃ films was direct allowed with the values that decreased (2-1.69 eV) by increasing substrate temperature from 30 to 200°C. The dispersion data obeyed the single oscillator relation of the Wemple-DiDomenico model and Cauchy model. The electrical free carrier susceptibility and the carrier concentration of the effective mass ratio were estimated according to the model of Spitzer and Fan.

Key words: Thin film, Thermal evaporation technique, X-ray diffraction, Optical parameters

. [J]. 金属学报英文版, 2016, 29(1): 79-88.

A. Harizi, M. Ben Rabeh, M. Kanzari. Substrate Temperature-Dependent Physical Properties of Thermally Evaporated Sn₄Sb₆S₁₃ Thin Films[J]. Acta Metallurgica Sinica (English Letters), 2016, 29(1): 79-88.

图/表 15

Fig.1 EDX measurements of the Sn4Sb6S13 thin films deposited at 30°C

Fig.2 X-ray diffraction patterns of standard and as-synthesized Sn4Sb6S13 powder

Fig.3 X-ray diffraction patterns of Sn4Sb6S13 thin films deposited on glass substrates heated at different temperatures

Table 1 Structural parameters and surface roughness of Sn4Sb6S13 films deposited at different substrate temperatures

T_s (°C)	FWHM (°)	Crystallite size, L (nm)	Strain ε×10^-4	Number of crystallites per unit area (10¹⁵ N)	Dislocation density δ×10¹⁴ (lin. m^-2)	Roughness (nm)
T_s (°C)	FWHM (°)	Crystallite size, L (nm)	Strain ε×10^-4	Number of crystallites per unit area (10¹⁵ N)	Dislocation density δ×10¹⁴ (lin. m^-2)	AFM	Optical
30	0.41	20	6.38	67.2	25.00	2.81	4.08
60	0.36	22	5.62	37.9	19.15	3.76	4.36
100	0.35	23	5.50	35.9	18.53	4. 53	4.77
140	0.29	28	4.55	16.8	12.54	5.84	6.30
170	0.29	29	4.40	18.4	12.05	6. 95	7.21
200	0.17	48	2.65	3.6	4.33	8.23	8.43

Fig.4 2D and 3D AFM micrographs (1μm ×1 μm) of Sn4Sb6S13 thin films deposited on glass substrates heated at different temperatures

Fig.5 Optical transmission a and reflection b spectra of Sn4Sb6S13 thin films deposited on glass substrates heated at different temperatures

Fig.6 Absorption coefficient α of Sn4Sb6S13 thin films deposited on glass substrates heated at different temperatures

Fig.7 Plot of (αhν)2 versus photon energy (hν) for Sn4Sb6S13 thin films deposited on glass substrates heated at different temperatures

Fig.8 Variation of band gap energy Eg versus substrate temperature for Sn4Sb6S13 thin films

Fig.9 Variation of refractive index n vs wavelength and the fit with Cauchy’s formula for Sn4Sb6S13 thin films deposited at different substrate temperatures

Table 2 Results concerning Cauchy parameters and refractive index n(0) at zero photon energy

T_s (°C)	A (nm^-2)	B (10¹² nm^-4)	n₀ (Cauchy)	n_(H-V)
30	-119,842	0.36	2.59	2.58
60	-772,309	1.05	3.18	3.04
100	-1,268,800	1.38	3.54	3.24
140	-1,501,720	1.41	3.90	3.53
170	-792,455	2.23	3.38	3.39
200	-958,282	1.48	3.50	3.33

Fig.10 Plot of (n2-1)-1 versus (hν)2 for Sn4Sb6S13 thin films deposited at different substrate temperatures

Fig.11 Plot of εr versus λ2 for Sn4Sb6S13 thin films deposited at different substrate temperatures

Fig.12 Plot of -4πχe versus λ2 for Sn4Sb6S13 thin films deposited at different substrate temperatures

Table 3 Values of the dispersion energy (Ed), oscillator energy (E0), ratio of the carrier concentration to the electron effective mass (n/m*), the lattice dielectric constant (ε∞ ), and electrical susceptibility χe as a function of substrate temperature of Sn4Sb6S13 thin films

T (°C)	E₀ (eV)	E_d (eV)	E₀/E_g (eV)	N/m^* (10⁴⁸ cm^-3)	$ε ∞ S$	$ε ∞ w$	- $χ e$ (10^-2)
30	2.15	10.16	1.06	3.24	7.56	5.72	1.19-07.40
60	1.91	12.35	0.96	4.17	10.30	7.46	1.51-09.71
100	1.86	13.03	0.99	2.31	11.22	8.00	0.87-05.41
140	1.85	13.8	1.01	1.14	12.72	8.45	0.55-02.46
170	1.48	10.69	0.83	6.70	13.34	8.22	4.29-14.96
200	1.74	12.70	1.00	5.91	12.27	8.29	3.18-13.37

T (°C)	E₀ (eV)	E_d (eV)	E₀/E_g (eV)	N/m^* (10⁴⁸ cm^-3)	$ε ∞ S$	$ε ∞ w$	- $χ e$ (10^-2)
30	2.15	10.16	1.06	3.24	7.56	5.72	1.19-07.40
60	1.91	12.35	0.96	4.17	10.30	7.46	1.51-09.71
100	1.86	13.03	0.99	2.31	11.22	8.00	0.87-05.41
140	1.85	13.8	1.01	1.14	12.72	8.45	0.55-02.46
170	1.48	10.69	0.83	6.70	13.34	8.22	4.29-14.96
200	1.74	12.70	1.00	5.91	12.27	8.29	3.18-13.37

参考文献 36

[1]	H. Dittrich, A. Stadler, D. Topa, H.J. Schimper, A. Basch, Phys. Status Solidi A 206, 1034 (2009)
[2]	H. Dittrich, A. Bieniok, U. Brendel, M. Grodzicki, D. Topa, Thin Solid Films 515, 5745 (2007)
[3]	P.H. Soni, M.V. Hathi, C.F. Desai, Bull. Mater. Sci. 26, 683(2003)
[4]	K. Hoang, S.D. Mahanti, J. Androulakis, M.G. Kanatzidis, Mater. Res. Soc. Symp. Proc. 886, 0086-F05-06.1 (2006)
[5]	M.Y. Chen, K.A. Rubin, 22 June 1992
[6]	D. Abdelkader, M.B. Rabeh, N. Khemiri, M. Kanzari, Mater. Sci. Semicond. Process. 21, 14(2014)
[7]	Y. Fadhli, A. Rabhi, M. Kanzari, Acta Metall. Sin. 28, 656 (2015). (Engl. Lett.)
[8]	S.I. Boldish, W.B. White, Am. Mineral. 83, 865(1998)
[9]	T.F. Lomelino, G. Mozurkewich, Am. Mineral. 74, 1285(1989)
[10]	B. Pejova, I. Grozdanov, D. Nesheva, A. Petrova, Chem. Mater. 20, 2551(2008)
[11]	J. Gutwirth, T. Wagner, P. Nemec, S.O. Kasap, M. Frumar, J. Non-Cryst. Solids 354, 497 (2008)
[12]	S. Manolache, A. Duta, L. Isac, M. Nanu, A. Goossens, J. Schoonman, Thin Solid Films 515, 5957 (2007)
[13]	M.B. Rabeh, N. Khedmi, M. Kanzari, J. Mater. Sci. Mater. Electron. 26, 2002 (2015)
[14]	O.S. Heavens, Optical Properties of Thin Solid Films Butterworths (London, 1955)
[15]	N. Khemiri, B. Khalfallah, D. Abdelkader, M. Kanzari, Int. J. Thin Films Sci. 1, 7(2014)
[16]	B.D. Cullity, Elements of X-ray Diffraction, 2nd edn. (Addition-Weasley, London, 1978), pp. 101-102
[17]	G.K. Williamson, R.E. Smallman, Philos. Mag. 1, 34(1956)
[18]	M. Dhanam, R.R. Prabhu, P.K. Manoj, Mater. Chem. Phys. 107, 289(2008)
[19]	I.W. Horcas, R. Fernandez, J.M. Rev. Sci. Instrum. 78, 13705(2007)
[20]	M. Kanzari, B. Rezig, Semicond. Sci. Technol. 15, 335(2000)
[21]	O. Savadogo, K.C. Manda, Sol. Energy Matter. Sol. Cells 26, 117 (1992)
[22]	J. Kaur, S.K. Tripathi, Acta Metall. Sin. 28, 591 (2015). (Engl. Lett.)
[23]	Y.I. Uhanov, Moscow, 1977)
[24]	J. Tauc, R. Grigorovici, A. Vancu, Phys. Stat. Sol. B 15, 627 (1966)
[25]	E.A. Davis, N.F. Mott, Philos. Mag. 22, 903(1970)
[26]	A. Larbi, H. Dahman, M. Kanzari, Vacuum 110, 34 (2014)
[27]	A. Jebali, N. Khemiri, F. Aousgi, M.B. Rabeh, M. Kanzari, Mater. Sci. Semicond. Process. 27, 1057(2014)
[28]	R. Swanepoel, J. Phys. E: Sci. Instrum. 16, 1214(1983)
[29]	R. Swanepoel, J. Phys. E: Sci. Instrum. 17, 896(1984)
[30]	J.C. Manifacier, J. Gasiot, J.P. Fillard, J. Phys. E: Sci. Instrum. 9, 1002(1976)
[31]	F. Rahimi, A. Rahmati, S. Mardani, Soft Nanosci. Lett. 4, 1(2014)
[32]	A.I. Ali, A.H. Ammar, A. Abdel, Moez. Superlattices Microstruct. 65, 285(2014)
[33]	S.H. Wemple, M. DiDomenico, Phys. Rev. B 3, 1338 (1971)
[34]	S.H. Wemple, Phys. Rev. B 7, 3767 (1973)
[35]	W.G. Spitzer, H.Y. Fan, Phys. Rev. 106, 882(1957)
	close
36	Click to get updates and verify authenticity.

Substrate Temperature-Dependent Physical Properties of Thermally Evaporated Sn₄Sb₆S₁₃ Thin Films

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

图/表 15

参考文献 36

相关文章 0

编辑推荐

Metrics

本文评价