Please wait a minute...
Acta Metallurgica Sinica (English Letters)  2009, Vol. 22 Issue (2): 153-160    DOI: 10.1016/S1006-7191(08)60083-6
Research paper Current Issue | Archive | Adv Search |
Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions
Gang JI1,2,3, Ze ZHANG1, Yanxue CHEN3, Shishen YAN3, Yihua LIU3,Liangmo MEI3
1) Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology,Beijing 100124, China\par\noindent
2) Institute of Biophysics, Chinese Academy of Sciences, Beijing 100101, China
3) School of Physics and National Key Laboratory of Crystal Materials, Shandong University,Jinan 250100, China
Download:  PDF(2688KB) 
Export:  BibTeX | EndNote (RIS)      

[FeNi(3~nm)/Zn1- xCoxO(3~nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2 (d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization αsc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. αsc was reduced from 11.7% (and 10.5%) at 90 K to 7.31 % (and 5.93 %) at room temperature for d=3 (and d=10). And η was reduced from 39.5 % (and 35.5 %) at 90 K to 24.7 % (and
20.0 %) at room temperature for d=3 (and d=10).

Key words:  Spin injection      Electrical detection      Magnetoresistance      Room temperature ferromagnetic semiconductor      Ferromagnetic composite layers     
Received:  04 March 2008     
Corresponding Authors:  Gang JI     E-mail:

Cite this article: 

Gang JI,Ze ZHANG1,Yanxue CHEN,Shishen YAN,Yihua LIU,Liangmo MEI. Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions. Acta Metallurgica Sinica (English Letters), 2009, 22(2): 153-160.

URL:     OR

[1]S. Ghosh, V. Sih, W.H. Lau, D.D. Awschalom,S.Y. Bae, S. Wang, S. Vaidya and G. Chapline,  Appl Phys Lett 86(2005)232507.
[2]T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma and M. Kawasaki, Appl Phys Lett  75(1999)3366.
[3]K. Sato and H. Katayama-Yoshida,  Jpn J Appl Phys 2 39(2000)L555.
[4]Y. Wang, L. Sun, D.D. Han, L.F. Liu, J.F. Kang, X.Y. Liu,X. Zhang and R.Q. Han,  Acta Phys Sin-Ch Ed  55(2006)6651.
[5]C.B. Fitzgerald, M. Venkatesan, J.G. Lunney, L.S. Dorneles and J.M.D. Coey,  Appl Surf Sci  247(2005)493.
[6]D.A. Schwartz, K.R. Kittilstved and D.R. Gamelin,  Appl Phys Lett  85(2004)1395.
[7]S.S. Yan, C. Ren, X. Wang, Y. Xin, Z.X. Zhou, L.M. Mei,M.J. Ren, Y.X. Chen, Y.H. Liu and H. Garmestani,  Appl Phys Lett 84(2004)2376.
[8]S.S. Yan, J.P. Liu, L.M. Mei, Y.F. Tian, H.Q. Song, Y.X.Chen and G.L. Liu,  J Phys-Condens Mater  18(2006)10469.
[9]S.J. Pearton, D.P. Norton, R. Frazier, S.Y. Han, C.R.Abernathy and J.M. Zavada,  IEE P-Circ Dev Syst  152(2005)312.
[10]R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt,A. Waag and L.W. Molenkamp,  Nature  402(1999)787.
[11]Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H. Ohno and D.D. Awschalom,  Nature  402(1999)790.
[12]A.T. Hanbicki, B.T. Jonker, G. Itskos, G. Kioseoglou and A. Petrou,  Appl Phys Lett  80(2002)1240.
[13]P. van Dorpe, Z. Liu, W. Van Roy, V.F. Motsnyi, M.Sawicki, G. Borghs and J. de Boeck,  Appl Phys Lett  84(2004)3495.
[14]M. Johnson and R.H. Silsbee,  J Appl Phys  63 (1988) 3934.
[15]M. Johnson and R.H. Silsbee,  Phys Rev Lett  55 (1985) 1790.
[16]H.C. Koo, H. Yi, J.B. Ko, J. Chang, S.H. Han, D. Jung,S.G. Huh and J. Eom,  Appl Phys Lett  90(2007)022101.
[17]I. Zutic, J. Fabian and S.C. Erwin,  Phys  Rev Lett 97(2006)026602.
[18]M.D. Miah,  Mater Lett  60(2006)2863.
[19]A.T. Filip, J.J.H.M. Schoonus, H.J.M. Swagten, B.Koopmans, W.J.M. de Jonge, F. Karouta, E.J. van Geluk, W. van Roy and J. de Boeck,  J Supercond  18(2005)379.
[20]M. Johnson,  Physica E 10(2001)472.
[21]K. Matsuyama, H. Asada, T. Saeki, Y. Sawamoto and K.Taniguchi,  J Appl Phys  81(1997)5449.
[22]D.R. Loraine, D.I. Pugh, H. Jenniches, R. Kirschman, S.M.Thompson, W. Allen, C. Sirisathikul and J.F. Gregg,  J Appl Phys 87(2000)5161.
[23]G. Schmidt, D. Ferrand, L.W. Molenkamp, A.T. Filip and B.J.van Wees,  Phys Rev B  62(2000)R4790.
[24]G. Schmidt and L.W. Molenkamp,  J Appl Phys  89(2001)7443.
[25]F.G. Monzon, M. Johnson and M.L. Roukes,  Appl Phys Lett  71(1997)3087.

[1] Li-Ping Deng, Bing-Shu Wang, Hong-Liang Xiang, Xiao-Fang Yang, Rong-Mei Niu, Ke Han. Effect of Annealing on the Microstructure and Properties of In-situ Cu-Nb Microcomposite Wires[J]. Acta Metallurgica Sinica (English Letters), 2016, 29(7): 668-673.
[2] Zhengyou ZHOU,Xiaoshan WU,Jun DU,Sheng XU,Xiaojun BAI,Guangsheng LUO Feng. Effects of ferrites on magnetic transport properties in La2/3Sr1/3MnO3/ferrites composites[J]. Acta Metallurgica Sinica (English Letters), 2009, 22(1): 51-57.
[3] T.He, B.Zhao, Y.Gao, F.Zeng, F.Pan. MAGNETORESISTANCE EFFECT OBSERVED IN Fe/Mo MULTILAYERS PREPARED BY ELECTRON BEAM EVAPORATION[J]. Acta Metallurgica Sinica (English Letters), 2003, 16(3): 237-240 .
[4] L.Q. Pan, H. Qiu, F.P. Wang. SPIN-DEPENDENT TUNNELING MAGNETORESISTANCE IN Fe-O/AlOx/Fe-O FILMS[J]. Acta Metallurgica Sinica (English Letters), 2002, 15(2): 233-237 .
[5] S.S. Yan;J.X. Lou;L. Zhang; R.Z. Zhang; Y.M. Zhang;Y.H. Liu; L.M. Mei and J. Huang(Department of Physics, Shandong University, Jinan 250100, China)(Department of Environment Engineering, Shandong University, Jinan 250100, China). STRUCTURE, MAGNETISM AND MAGNETORESISTANCE OF ANNEALED Co/Cu DISCONTINUOUS MULTILAYERS[J]. Acta Metallurgica Sinica (English Letters), 1997, 10(6): 465-473.
No Suggested Reading articles found!
ISSN: 1005-0302
CN: 21-1315/TG
About AMSE
Privacy Statement
Terms & Conditions
Editorial Office: Acta Metallurgica Sinica(English Letters), 72 Wenhua Rd.,
Shenyang 110016, China
Tel: +86-024-83978879

Copyright © 2016 AMSE, All Rights Reserved.