Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

doi:10.1007/s40195-014-0059-x

金属学报英文版 ›› 2014, Vol. 27 ›› Issue (2): 368-372.DOI: 10.1007/s40195-014-0059-x

• • 上一篇

收稿日期:2013-08-21 修回日期:2013-10-31 出版日期:2014-04-25 发布日期:2014-05-07

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Yinzhi Chen¹, Hongchuan Jiang¹(), Shuwen Jiang¹, Xingzhao Liu¹, Wanli Zhang¹, Qinyong Zhang²

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
2. School of Material Science and Engineering, Xihua University, Chengdu, 610039, China

Received:2013-08-21 Revised:2013-10-31 Online:2014-04-25 Published:2014-05-07

摘要/Abstract

Abstract:

Indium tin oxide (ITO) thin films were prepared on alumina ceramic substrates by radio frequency magnetron sputtering. The samples were subsequently annealed in air at temperatures ranging from 500 to 1,100 °C for 1 h. The influences of the annealing temperature on the microstructure and electrical properties of the ITO thin films were investigated, and the results indicate that the as-deposited ITO thin films are amorphous in nature. All samples were crystallized by annealing at 500 °C. As the annealing temperature increases, the predominant orientation shifts from (222) to (400). The carrier concentration decreases initially and then increases when the annealing temperature rises beyond 1,000 °C. The resistivity of the ITO thin films increases smoothly as the annealing temperature increases to just below 900 °C. Beyond 900 °C, however, the resistivity of the films increases sharply. The annealing temperature has a significant effect on the stability of the ITO/Pt thin film thermocouples (TFTCs). TFTCs annealed at 1,000 °C show improved high-temperature stability and Seebeck coefficients of up to 77.73 μV/°C.

Key words: Indium tin oxide, Thin film, Annealing treatment

. [J]. 金属学报英文版, 2014, 27(2): 368-372.

Yinzhi Chen, Hongchuan Jiang, Shuwen Jiang, Xingzhao Liu, Wanli Zhang, Qinyong Zhang. Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films[J]. Acta Metallurgica Sinica (English Letters), 2014, 27(2): 368-372.

图/表 5

Fig. 1 XRD patterns of ITO thin films deposited on an alumina ceramic substrate at different annealing temperatures

Fig. 2 SEM images of ITO films obtained under different annealing temperatures: a 500 °C, b 900 °C, c 1,000 °C, d 1,100 °C

Fig. 3 Variations in the resistivity of ITO films with annealing temperature

Fig. 4 Variations in the bulk concentration and mobility of ITO films with annealing temperature

Fig. 5 a EMFs of TFTCs obtained under different annealing temperatures versus the temperature difference, b Seebeck coefficients of TFTCs obtained under different annealing temperatures versus the temperature difference

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Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

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