Silver Dopant-Induced Effect on Structural and Optoelectronic Properties of CdSe Thin Films

doi:10.1007/s40195-018-0824-3

Abstract

Abstract:

Thin films of CdSe and silver (Ag)-doped CdSe have been prepared on glass substrates by thermal evaporation in argon gas atmosphere. X-ray diffraction pattern indicates the presence of hexagonal structure with preferred orientation along (100) plane. Elemental composition of the thin films has been analyzed using energy dispersive X-ray analysis. Scanning electron microscopy has been used to investigate the morphology of the thin films. Transmission electron microscope reveals spherical nature of nanoparticles. A decrease in the band gap due to the formation of band tails in the band gap with increase in Ag doping in CdSe lattice has been observed. Photoluminescence spectra indicate redshift in band edge emission peak with increase in Ag doping in CdSe. Electrical conductivity measurements are also studied, and two types of conduction mechanisms taking part in the transport phenomena are observed. Hall measurements indicate n-type behavior of undoped and Ag-doped CdSe thin films.

Key words: Semiconductors, Thin films, Vapor deposition, Electron microscopy, Electrical properties

Jagdish Kaur, Ramneek Kaur, S. K. Tripathi. Silver Dopant-Induced Effect on Structural and Optoelectronic Properties of CdSe Thin Films[J]. Acta Metallurgica Sinica (English Letters), 2019, 32(5): 541-549.

Figures/Tables 10

Fig. 1 XRD patterns of undoped and Ag-doped CdSe thin films at 1% and 5% dopant concentration

Fig. 2 EDX spectra of undoped CdSe a, CdSe:Ag 1% b CdSe:Ag 5% c thin films and atomic fraction of thin films d

Fig. 3 SEM images of CdSe a, CdSe:Ag 1% b CdSe:Ag 5% c thin films

Fig. 4 TEM images of CdSe a, CdSe:Ag 1% b CdSe:Ag 5% c thin films (the insets in figures represent the histogram for particle size distribution)

Fig. 5 a UV-Vis spectra (the insets illustrate the Tauc plots for corresponding thin films) b room temperature photoluminescence spectra of undoped and Ag-doped CdSe thin films (α: absorption coefficient; h: Planck’s constant;ν: frequency; λ: wavelength; λex: excitation wavelength)

Fig. 6 a Temperature dependence of electrical conductivity b validity of Mott’s relation

Table 1 Electrical parameters for CdSe and Ag-doped CdSe thin films

Thin film	σ_d (Ω^-1 cm^-1)	Activation energy (eV)		T₀ (K)	N(E_F) (eV^-1 cm^-3)	R (cm)	W (eV)	α′R
Thin film	σ_d (Ω^-1 cm^-1)	HTR	LTR	T₀ (K)	N(E_F) (eV^-1 cm^-3)	R (cm)	W (eV)	α′R
CdSe	(3.74 ± 0.305) × 10^-7	1.14 ± 0.043	0.071 ± 0.005	2.53 × 10⁸	1.57 × 10¹⁸	1.14 × 10^-6	0.1026	14.136
CdSe:Ag 1%	(2.24 ± 0.303) × 10^-8	0.81 ± 0.021	0.038 ± 0.001	5.32 × 10⁶	7.48 × 10¹⁹	4.35 × 10^-7	0.0382	5.394
CdSe:Ag 5%	(9.45 ± 0.324) × 10^-8	0.61 ± 0.024	0.116 ± 0.001	2.25 × 10⁸	1.77 × 10¹⁸	1.11 × 10^-6	0.0986	13.764

Table 2 Carrier concentration (n) and mobility (μ) of carriers for CdSe and Ag-doped CdSe thin films

Thin film	n (cm^-3)	μ (cm² V^-1 s^-1)
CdSe	1.20 × 10¹¹	21.42
CdSe:Ag 1%	1.07 × 10¹⁰	13.12
CdSe:Ag 5%	1.07 × 10¹¹	5.52

Fig. 7 Sub-gap absorption spectra of undoped and Ag-doped CdSe thin films

Table 3 Urbach energy (EU) and density of defect states (Nd) of CdSe and Ag-doped CdSe thin films

Thin film	E_U (meV)	N_d (cm^-3)
CdSe	120	8.21 × 10¹⁹
CdSe:Ag 1%	279	4.88 × 10²⁰
CdSe:Ag 5%	129	2.12 × 10²⁰

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